Authors
Citation
Pb. Fischer et Sy. Chou, HIGH-RESOLUTION ELECTRON-BEAM LITHOGRAPHY AND HIGH-ACCURACY OVERLAY USING A MODIFIED SEM, Microelectronic engineering, 21(1-4), 1993, pp. 141-144
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
21
Issue
1-4
Year of publication
1993
Pages
141 - 144
Database
ISI
SICI code
0167-9317(1993)21:1-4<141:HELAHO>2.0.ZU;2-N
Abstract
10 nm wide metal lines 30 nm apart, and 10 nm wide gaps over 300 betwe
en two metal rectangles have been repeatedly achieved on thick GaAs su
bstrates using a modified scanning electron microscope (SEM) operated
at 35 keV and lift-off of Ni/Au. Sub-50 nm overlay accuracy in multi-l
evel e-beam lithography has also been achieved using the same modified
SEM.