PHASE-SHIFT MASK MAKING BY E-BEAM LITHOGRAPHY

Authors
ELSNER H HAHMANN P
Citation
H. Elsner et P. Hahmann, PHASE-SHIFT MASK MAKING BY E-BEAM LITHOGRAPHY, Microelectronic engineering, 21(1-4), 1993, pp. 169-172
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
21
Issue
1-4
Year of publication
1993
Pages
169 - 172
Database
ISI
SICI code
0167-9317(1993)21:1-4<169:PMMBEL>2.0.ZU;2-M
Abstract
A procedure is described to expose phase shift masks with high accurac y. For this purpose we introduced an aluminium layer to prevent chargi ng effects. The phase shifter is a silicon dioxide layer.