RESIST POLARITY CHANGES DURING THE SILYATION PROCESS

Citation
A. Weill et al., RESIST POLARITY CHANGES DURING THE SILYATION PROCESS, Microelectronic engineering, 21(1-4), 1993, pp. 227-230
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
21
Issue
1-4
Year of publication
1993
Pages
227 - 230
Database
ISI
SICI code
0167-9317(1993)21:1-4<227:RPCDTS>2.0.ZU;2-T
Abstract
In this paper we describe our investigations on surface tension charac terisation of the Plasmask(R) resist during the HMDS silylation proces s. Emphasis is put on the decrease of the polar component during the p rocess. Whereas non modified novolacs are not soluble in non polar sol vent like xylene, toluene or chlorobenzene, these solvents are found t o dissolve the upper part of the exposed areas.