G. Stangl et al., NEWLY DEVELOPED NOVOLAK-BASED RESIST MATERIALS FOR ION PROJECTION LITHOGRAPHY (IPL) WITH STRUCTURE DIMENSIONS OF 200-100 NANOMETERS, Microelectronic engineering, 21(1-4), 1993, pp. 245-250
The application of IPL for the fabrication of nanometerstructures requ
ires the development of special resist materials, or, at least, of nov
el resist development procedures. Not long ago, resist producers held
the opinion that novolak-based materials are not useful for structurin
g in dimensions smaller than 0.3 mum. In cooperation with a well known
resist company we succeeded in developing new organic novolak-based r
esists, which can be structured in lines and spaces smaller than 150 n
m by exposure with light ions. IPL experiments were performed with the
''Alpha Ion Projector'' built by the Viennese company Ion Microfabric
ation Systems (IMS).