NEWLY DEVELOPED NOVOLAK-BASED RESIST MATERIALS FOR ION PROJECTION LITHOGRAPHY (IPL) WITH STRUCTURE DIMENSIONS OF 200-100 NANOMETERS

Citation
G. Stangl et al., NEWLY DEVELOPED NOVOLAK-BASED RESIST MATERIALS FOR ION PROJECTION LITHOGRAPHY (IPL) WITH STRUCTURE DIMENSIONS OF 200-100 NANOMETERS, Microelectronic engineering, 21(1-4), 1993, pp. 245-250
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
21
Issue
1-4
Year of publication
1993
Pages
245 - 250
Database
ISI
SICI code
0167-9317(1993)21:1-4<245:NDNRMF>2.0.ZU;2-L
Abstract
The application of IPL for the fabrication of nanometerstructures requ ires the development of special resist materials, or, at least, of nov el resist development procedures. Not long ago, resist producers held the opinion that novolak-based materials are not useful for structurin g in dimensions smaller than 0.3 mum. In cooperation with a well known resist company we succeeded in developing new organic novolak-based r esists, which can be structured in lines and spaces smaller than 150 n m by exposure with light ions. IPL experiments were performed with the ''Alpha Ion Projector'' built by the Viennese company Ion Microfabric ation Systems (IMS).