Wa. Loong et al., ENHANCED O2 PLASMA STRIPPING OF P+ AND SI+ IMPLANTED NEGATIVE RESIST BY H2 PLASMA PRETREATMENT, Microelectronic engineering, 21(1-4), 1993, pp. 259-262
Hydrogen plasma pretreatments (100 W, 20 sccm, 0.2 torr, 40 approximat
ely 115-degrees-C, 10 approximately 30 min) of Si+, P+, B+ and As+ imp
lanted (100 keV, 1x10(15) ion/cm2) Hunt HR-200 negative resists to the
oxygen plasma stripping (100 W, 40 sccm, 0.45 torr, 40 approximately
115-degrees-C) were studied in this report. The results showed that on
ly the resistance to oxygen plasma stripping of Si+ and P+ implanted H
R-200 were greatly reduced at the conditions in this study. The activa
tion energies Eact of Si+ and P+ implanted HR-200 by oxygen plasma str
ipping can be both brought down from approximately 1.3 to approximatel
y 0.85 kcal/mole by hydrogen plasma pretreatment. The FTIR, SEM and ES
CA analyses indicated the decreasing of carbonization layers by hydrog
en plasma pretreatments.