CHARACTERIZATION OF A POSITIVE-TONE WET SILYLATION PROCESS WITH THE AZ 5214TM PHOTORESIST

Authors
GOGOLIDES E YANNAKOPOULOU K NASSIOPOULOS AG TSOIS E HATZAKIS M
Citation
E. Gogolides et al., CHARACTERIZATION OF A POSITIVE-TONE WET SILYLATION PROCESS WITH THE AZ 5214TM PHOTORESIST, Microelectronic engineering, 21(1-4), 1993, pp. 263-266
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
21
Issue
1-4
Year of publication
1993
Pages
263 - 266
Database
ISI
SICI code
0167-9317(1993)21:1-4<263:COAPWS>2.0.ZU;2-2
Abstract
A liquid phase (wet) silylation process has been developed1 using the commercial photoresist AZ 5214TM, and I-line lithography. Here, the pr ocess is characterized using proton NMR (Nuclear Magnetic Resonance) s pectroscopy, and SEM analysis of fabricated submicron patterns.