REDUCED PHOTORESIST SCUMMING TENDENCIES THROUGH THE OPTIMIZATION OF PHOTORESIST FORMULATION PARAMETERS

Authors
BELL K DIXIT S KAUTZ R KOES T LAZARUS R TALOR G
Citation
K. Bell et al., REDUCED PHOTORESIST SCUMMING TENDENCIES THROUGH THE OPTIMIZATION OF PHOTORESIST FORMULATION PARAMETERS, Microelectronic engineering, 21(1-4), 1993, pp. 279-282
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
21
Issue
1-4
Year of publication
1993
Pages
279 - 282
Database
ISI
SICI code
0167-9317(1993)21:1-4<279:RPSTTT>2.0.ZU;2-J
Abstract
This paper describes research on the subject of resist scumming induce d by TMAH development. Variations in the resist formulations were made according to a statistical design. The factors investigated were resi n molecular weight and polydispersity (PD), sensitizer functionalizati on, resin to sensitizer loading, and solvent effects. Resin molecular weight and sensitizer functional-ization were found to be critically i mportant to reduce scumming.