CH4 H2 RIE OF INGAASP/INP MATERIALS - AN APPLICATION TO DFB LASER FABRICATION/

In this paper we present the characterization and application of the C H4/H-2 RIE technique for fabrication of optoelectronic devices on InGa AsP/InP materials. We obtained depth damage profile by Photoluminescen ce (PL) measurements and chemical etching. Using appropriate processin g parameters a 15 nm deep damaged layer was measured on InGaAsP. Three CH4/H-2 RIE process steps were successfully applied to the fabricatio n of emitting at 1.55 mum BRS-DFB lasers. The devices demonstrated cw operation at a threshold of 24 mA with a side mode suppression of abou t 30 dB.