SIMULATION OF TIME DEPENDING PARTICLE-TRANSPORT DURING DRY ETCH PROCESS

Authors
BORNIG K PELKA J
Citation
K. Bornig et J. Pelka, SIMULATION OF TIME DEPENDING PARTICLE-TRANSPORT DURING DRY ETCH PROCESS, Microelectronic engineering, 21(1-4), 1993, pp. 325-328
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
21
Issue
1-4
Year of publication
1993
Pages
325 - 328
Database
ISI
SICI code
0167-9317(1993)21:1-4<325:SOTDPD>2.0.ZU;2-R
Abstract
Energy and angular distributions of ions at the substrate electrode ar e computed with a Monte-Carlo-Simulation, accounting for charge transf er collisions and elastic scattering via differential cross sections. The time dependent electric field the ions react on is calulated with an extended hydrodynamical theory, that is valid for the whole pressur e range including those that is relevant for RIE pocessing. The influe nce of the scattering processes on etch profiles is estimated from the calculated distributions.