DISTORTION EVALUATION OF NICKEL STENCIL MASKS WITH THE HELP OF ION PROXIMITY EXPOSURES AND REGISTRATION MEASUREMENTS ON THE LEITZ LMS-2000

A metrology has been developed to evaluate the distortion of large are a stencil masks under ion beam exposure. In an ion projector an ion be am proximity printing was performed with a 85 mm diameter beam of 7.5 keV Helium ions. The gap between Nickel stencil test mask and Silicon wafer was 2 mm. Ion beam exposure was done into the surface of 0.8 mum thick AZ-5206 resist with subsequent UV blanket exposure and image re versal development. The Leitz LMS-2000 registration measurement system provided data of the resist pattern to analyse the stencil mask disto rtion within 25 nm precision and 50 nm accuracy.