CHARACTERIZATION OF SUBMICRON NMOS DEVICES DUE TO VISIBLE-LIGHT EMISSION

Authors
SCHONSTEIN I MULLER J HILLERINGMANN U GOSER K
Citation
I. Schonstein et al., CHARACTERIZATION OF SUBMICRON NMOS DEVICES DUE TO VISIBLE-LIGHT EMISSION, Microelectronic engineering, 21(1-4), 1993, pp. 363-366
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
21
Issue
1-4
Year of publication
1993
Pages
363 - 366
Database
ISI
SICI code
0167-9317(1993)21:1-4<363:COSNDD>2.0.ZU;2-G
Abstract
In this paper process characterization by light emission of NMOS devic es is discussed. Electrical measurements, optical measurements and sim ulation results of conventional and LDD short channel transistors are compared. As an application of the optical investigations, the control able operating region and the effective channel length of NMOS transis tors can be determined.