LATERAL DOWN-SCALING OF SELECTIVE AREA MOVPE-GROWN GAINAS INP WIRES AND DOTS/

In situ buried GaInAs/InP wires and dots are fabricated by low-pressur e MOVPE on patterned masked InP substrates. Under optimized growth con ditions, GaInAs structures with controlled lateral dimensions down to 35 nm can be obtained starting from relatively non-critical 0.25 mum m ask patterns and by exploiting lateral reduction growth effects. Below these dimensions, precise control over the GaInAs structures becomes difficult due to growth irregularities. Low-temperature photoluminesce nce spectra on wires of various dimensions show effects associated wit h growth rate and stoichiometry variations as well as the appearance o f side wall quantum well growth.