FABRICATION AND PERFORMANCE OF 1-DIM MODFETS

We fabricated GaAs/AlGaAs MODFETs having extremely small channels in p arallel perpendicular to the gate. The single channel width was varied from 250 nm down to 40 nm, and the pitch was 500 nm. These devices sh ow an intrinsic transconductance up to 1000 mS/mm. We studied the satu ration drift velocity at 300 K and found there is a strong limitation due to additional lateral interface scattering.