OPTICAL STUDIES OF BARRIER MODULATED INGAAS GAAS QUANTUM WIRES/

Authors
GREUS C ORTH A DAIMINGER F BUTOV L STRAKA J FORCHEL A
Citation
C. Greus et al., OPTICAL STUDIES OF BARRIER MODULATED INGAAS GAAS QUANTUM WIRES/, Microelectronic engineering, 21(1-4), 1993, pp. 397-400
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
21
Issue
1-4
Year of publication
1993
Pages
397 - 400
Database
ISI
SICI code
0167-9317(1993)21:1-4<397:OSOBMI>2.0.ZU;2-W
Abstract
We have investigated the optical properties of barrier modulated In0.1 8Ga0.82As/GaAs quantum wires with geometrical widths down to 25nm. All wires show a high quantum efficiency and an excitonic lifetime compar able to a 2D reference indicating that our process is largely free of process induced defects. For wires with widths less than 40nm the emis sion of the first and second lateral subband is observed under strong optical pumping in time dependent photoluminescence experiments.