B. Jacobs et al., COMPARISON OF THE SIDEWALL RECOMBINATION IN DRY AND WET ETCHED INGAASINP WIRES/, Microelectronic engineering, 21(1-4), 1993, pp. 401-404
We have investigated the influence of the sidewall recombination on th
e photoluminescence intensity of wet and dry etched InGaAs/InP wires w
ith widths between 60 nm and 10 mum for a wide range of excitation den
sities. While we obtain a large sidewall recombination velocity in the
range of 10(7) cm/sec at low excitation density, the decay of the emi
ssion intensity with decreasing wire width is completely suppressed at
higher excitation density due to the saturation of nonradiative recom
bination centers. Varying the bias voltage of the dry etching process
from 80 V up to 300 V we observe a significant increase of the sidewal
l recombination of dry etched structures at ion energies above 200 eV.