FABRICATION AND CHARACTERIZATION OF COMPACT 100NM SCALE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

This article describes an exploratory study of miniaturization of meta l oxide semiconductor field effect transistors (MOSFETs) to 100nm dime nsions. The study has provided a first demonstration of MOSFETs which meet 100nm design rules for all critical device levels and the resulti ng devices have active areas which measure only 700nm by 150nm. Allowi ng for device isolation, this corresponds to an integration density of 4 devices per square micron. The peak transconductance of the devices , for 120nm gate lengths, is 410mS/mm at room temperature. This combin ation of extreme miniaturization and very high transconductance is ach ieved partly through conventional scaling and partly through use of a new ultracompact device configuration. This article describes design a nd fabrication of these devices, and follows with a discussion of thei r electrical properties.