FABRICATION OF SI-COUPLED 3 TERMINAL SUPERCONDUCTING DEVICE USING SELECTIVE DEPOSITION OF BETA-W

Authors
BAKKER SJM ROUSSEEUW BAC VANDERDRIFT E KLAPWIJK TM RADELAAR S
Citation
Sjm. Bakker et al., FABRICATION OF SI-COUPLED 3 TERMINAL SUPERCONDUCTING DEVICE USING SELECTIVE DEPOSITION OF BETA-W, Microelectronic engineering, 21(1-4), 1993, pp. 435-438
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
21
Issue
1-4
Year of publication
1993
Pages
435 - 438
Database
ISI
SICI code
0167-9317(1993)21:1-4<435:FOS3TS>2.0.ZU;2-I
Abstract
The fabrication of a silicon coupled superconducting FET using beta-W as a superconductor is reported. Devices with gate lengths of about 10 0 nm until 1 mum and with various substrate doping levels have been ma de. The fabrication process includes combined optical and e-beam litho graphy and self aligned CVD beta-W deposition. Preliminary measurement s of these devices are presented.