FABRICATION OF BURIED INP INGAASP WAVE-GUIDE-WIRES FOR USE IN OPTICALBEAMWIDTH TRANSFORMERS/

Authors
KOHL A ZENGERLE R BRUCKNER HJ OLZHAUSEN HJ MULLER R HEIME K
Citation
A. Kohl et al., FABRICATION OF BURIED INP INGAASP WAVE-GUIDE-WIRES FOR USE IN OPTICALBEAMWIDTH TRANSFORMERS/, Microelectronic engineering, 21(1-4), 1993, pp. 483-486
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
21
Issue
1-4
Year of publication
1993
Pages
483 - 486
Database
ISI
SICI code
0167-9317(1993)21:1-4<483:FOBIIW>2.0.ZU;2-D
Abstract
Passive InP/GaInAsP spot-size transformers for low-loss fiber-chip cou pling were fabricated using two-layered laterally tapered structures. These structures were defined by electron beam lithography and reactiv e ion etching. In a last step they were regrown with InP. In this pape r we report on effects being observed during the regrowth process whic h are significant for the waveguiding properties and applications of o ur structures.