PRODUCTION OF SILICON OXYNITRIDE LAYERS BY USE OF HEXAMETHYLDISILAZANE AND NITROGEN(I) OXIDE

Authors
KHRAMOVA LV SMIRNOVA TP EREMINA EG
Citation
Lv. Khramova et al., PRODUCTION OF SILICON OXYNITRIDE LAYERS BY USE OF HEXAMETHYLDISILAZANE AND NITROGEN(I) OXIDE, Inorganic materials, 28(8), 1992, pp. 1329-1332
Citations number
4
Categorie Soggetti
Material Science
Journal title
Inorganic materials → ACNP
ISSN journal
00201685
Volume
28
Issue
8
Year of publication
1992
Pages
1329 - 1332
Database
ISI
SICI code
0020-1685(1992)28:8<1329:POSOLB>2.0.ZU;2-M