IMPACT IONIZATION AND LIGHT-EMISSION IN HIGH-POWER PSEUDOMORPHIC ALGAAS INGAAS HEMTS/

Authors
TEDESCO C ZANONI E CANALI C BIGLIARDI S MANFREDI M STREIT DC ANDERSON WT
Citation
C. Tedesco et al., IMPACT IONIZATION AND LIGHT-EMISSION IN HIGH-POWER PSEUDOMORPHIC ALGAAS INGAAS HEMTS/, I.E.E.E. transactions on electron devices, 40(7), 1993, pp. 1211-1214
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
40
Issue
7
Year of publication
1993
Pages
1211 - 1214
Database
ISI
SICI code
0018-9383(1993)40:7<1211:IIALIH>2.0.ZU;2-N
Abstract
Impact ionization and light emission have been studied in pseudomorphi c AlGaAs/InGaAs HEMT's characterized by a delta doping inserted in the undoped AlGaAs layer and by an additional planar doping within the In GaAs channel, suitable for high-power applications. Impact ionization has been demonstrated to be the limiting effect for high V(ds) applica tions. Emission spectra in the 1.1-2.6 eV range have been analyzed sho wing peaks at low energy due to recombination mechanisms and a long ta il due to hot electrons.