2-DIMENSIONAL NUMERICAL-ANALYSIS OF FLOATING-GATE EEPROM DEVICES

Authors
CONCANNON A KEENEY S MATHEWSON A BEZ R LOMBARDI C
Citation
A. Concannon et al., 2-DIMENSIONAL NUMERICAL-ANALYSIS OF FLOATING-GATE EEPROM DEVICES, I.E.E.E. transactions on electron devices, 40(7), 1993, pp. 1258-1262
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
40
Issue
7
Year of publication
1993
Pages
1258 - 1262
Database
ISI
SICI code
0018-9383(1993)40:7<1258:2NOFED>2.0.ZU;2-P
Abstract
In this work, the importance of transient analysis in the design of fl oating-gate EEPROM's is demonstrated. Anomalous behavior, which was id entified during transient measurements, has been simulated using HFIEL DS, a general-purpose two-dimensional (2D) numerical device simulator. The corrective action that was taken at the time to eliminate the pro blem has been analyzed and explained using the simulation results. In addition, the simulator has been used to investigate 2D effects in the device due to process non-idealities.