A. Concannon et al., 2-DIMENSIONAL NUMERICAL-ANALYSIS OF FLOATING-GATE EEPROM DEVICES, I.E.E.E. transactions on electron devices, 40(7), 1993, pp. 1258-1262
In this work, the importance of transient analysis in the design of fl
oating-gate EEPROM's is demonstrated. Anomalous behavior, which was id
entified during transient measurements, has been simulated using HFIEL
DS, a general-purpose two-dimensional (2D) numerical device simulator.
The corrective action that was taken at the time to eliminate the pro
blem has been analyzed and explained using the simulation results. In
addition, the simulator has been used to investigate 2D effects in the
device due to process non-idealities.