NMOS DEVICE CHARACTERISTICS IN ELECTRON-BEAM-RECRYSTALLIZED SOI

Characteristics of n-channel MOSFET's fabricated in cold cathode elect ron-beam-recrystallized silicon-on-oxide layers have been examined. As sorted crystallographic defects exist in the recrystallized silicon la yer ranging from highly branched subgrain boundaries to widely spaced parallel subgrains and rows of threading dislocations. Some of these M OSFET transistors have characteristics approaching those fabricated in bulk silicon including almost-equal-to 828-cm2/V . s electron surface mobilities and 130-mV/decade inverse subthreshold slopes. However, ma ny of the devices tested exhibited leakage currents up to 10(-6) A/mum , resulting in high inverse subthreshold slopes and reduced threshold voltages. Some effects of crystal imperfections on device behavior are discussed.