LOW-FREQUENCY NOISE BEHAVIOR OF SI NMOSTS STRESSED AT 4.2 K

Authors
SIMOEN E DIERICKX B CLAEYS CL
Citation
E. Simoen et al., LOW-FREQUENCY NOISE BEHAVIOR OF SI NMOSTS STRESSED AT 4.2 K, I.E.E.E. transactions on electron devices, 40(7), 1993, pp. 1296-1299
Citations number
20
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
40
Issue
7
Year of publication
1993
Pages
1296 - 1299
Database
ISI
SICI code
0018-9383(1993)40:7<1296:LNBOSN>2.0.ZU;2-C
Abstract
The low-frequency (LF) noise behavior of Si NMOST's stressed at 4.2 K is investigated and compared with the stress-induced changes in the dc parameters. In linear operation, a reduction of the noise spectral de nsity is observed, which can be explained by considering the reduction in the device transconductance. The excess noise, typically observed in the kink region, is reduced after stress, as is the noise hysteresi s. This behavior can be understood by substituting the changes in the substrate current characteristic in the excess-noise model derived ear lier.