EFFECTS OF ULTRAVIOLET-IRRADIATION DURING GROWTH OF ZNSE EPILAYERS BYATMOSPHERIC-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY USING DIMETHYL ZINC AND H2SE

This work has investigated the effects of ultraviolet irradiation on t he epitaxial growth process of undoped ZnSe by atmospheric-pressure me talorganic vapor phase epitaxy. Dimethyl zinc and H2Se at a [VI]/[II] mole ratio of 20 were the source gases used for growth onto (100)-just oriented semi-insulating GaAs substrates. Hydrogen was used as the ca rrier gas. A 500 W Hg-Xe lamp irradiated the substrate at 300 nm wavel ength during growth. Growth temperature was varied from 210 to 450-deg rees-C. Epilayers grown in the presence of irradiation experienced a p rominent decrease in growth rate, which occurred even at high temperat ures. Through a combination of surface and vapor-phase reactions, UV i rradiation also affected the photoluminescence properties, crystalline quality, and surface morphology of the epilayers.