EFFECTS OF ULTRAVIOLET-IRRADIATION DURING GROWTH OF ZNSE EPILAYERS BYATMOSPHERIC-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY USING DIMETHYL ZINC AND H2SE
Ac. Alton et T. Yodo, EFFECTS OF ULTRAVIOLET-IRRADIATION DURING GROWTH OF ZNSE EPILAYERS BYATMOSPHERIC-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY USING DIMETHYL ZINC AND H2SE, Journal of crystal growth, 130(3-4), 1993, pp. 405-410
This work has investigated the effects of ultraviolet irradiation on t
he epitaxial growth process of undoped ZnSe by atmospheric-pressure me
talorganic vapor phase epitaxy. Dimethyl zinc and H2Se at a [VI]/[II]
mole ratio of 20 were the source gases used for growth onto (100)-just
oriented semi-insulating GaAs substrates. Hydrogen was used as the ca
rrier gas. A 500 W Hg-Xe lamp irradiated the substrate at 300 nm wavel
ength during growth. Growth temperature was varied from 210 to 450-deg
rees-C. Epilayers grown in the presence of irradiation experienced a p
rominent decrease in growth rate, which occurred even at high temperat
ures. Through a combination of surface and vapor-phase reactions, UV i
rradiation also affected the photoluminescence properties, crystalline
quality, and surface morphology of the epilayers.