EFFECTS OF SURFACE RECONSTRUCTION ON CDTE GAAS(001) INTERFACE STRUCTURE/

CdTe/GaAs(001) heterostructures were fabricated by molecular beam epit axy on chemically etched and thermally deoxidized GaAs(001) substrates , as well as GaAs(001) (3 x 1) buffer layers grown in situ by molecula r beam epitaxy. Different growth protocols were also explored, leading to Te-induced (6 x 1) or (2 x 1) surface reconstructions during the e arly growth stage. High-resolution cross-sectional transmission electr on microscopy was used to examine the final interface structure result ing from the different substrate preparations, and surface reconstruct ions. The (2 x 1) surface reconstruction led to pure (001) growth, whi le the (6 x 1) reconstruction led to an interface which included small (111)-oriented inclusions. In addition, deposition on etched and deox idized GaAs(001) wafers led to preferential CdTe growth within etch pi ts and resulted in a macroscopically rough interface region.