HIGH-QUALITY CDTE(100) GAAS(100) GROWN BY HOT-WALL EPITAXY USING GOLDTUBE RADIATION SHIELD/

High-quality CdTe(100) layers grown on GaAs(100) substrates by hot-wal l epitaxy using a gold tube radiation shield are reported for the firs t time. From the investigation of thermal properties, we find that the gold tube radiation shield is more effective in heat confinement and temperature stability than a stainless steel tube radiation shield. Th e CdTe lattice parameters perpendicular to the interface decrease as t he layer thickness increases by strain relaxation. We obtain 89 arc se c full width at half maximum of the X-ray double-crystal rocking curve for a 15 mum thick CdTe layer which is the smallest value reported to date. Exciton emission and donor-acceptor pair emission along with lo ngitudinal optical (LO) phonon replicas are obtained from PL measureme nts, confirming the good quality of the crystal.