Kj. Roberts, THE APPLICATION OF SYNCHROTRON X-RAY TECHNIQUES TO PROBLEMS IN CRYSTAL SCIENCE AND ENGINEERING, Journal of crystal growth, 130(3-4), 1993, pp. 657-681
The basic physical principles underlying synchrotron radiation generat
ion and related experimental techniques are outlined together with an
appraisal of their utility in the characterization of some of the stru
ctural aspects associated with crystal growth and related processes. T
he paper provides an overview of some recent studies through a number
of case examples: extended X-ray absorption fine structure (EXAFS) and
its application to studies of the local environment around surface ox
ides and extrinsic dopants in group III-V semiconductors; X-ray standi
ng waves and their application to studies of ionically adsorbed crysta
l habit modifiers; dynamic X-ray powder diffraction and its applicatio
ns to the in-situ examination of the solution crystallization of n-alk
anes and the electrochemical crystallization of PbO2; X-ray Laue topog
raphy and its application to the characterization of crystal lattice d
efects; high resolution X-ray multiple diffraction and its use in prob
ing lattice coherence in compound semiconductor multilayers; the use o
f surface X-ray diffraction to examine structural order at the crystal
solution interface. Current trends and likely future developments in
these and related techniques are outlined.