DETERMINATION OF COMPOSITION, THICKNESS AND GROWTH-RATE PROFILES OF MOCVD GROWN HG1-XCDXTE

Rutherford backscattering spectrometry (RBS) and particle induced X-ra y emission (PIXE) measurements have been performed on epitaxial Hg1-xC dxTe (MCT) layers on sapphire to determine composition, thickness and growth rates at discrete points along, and perpendicular to, the direc tion of gas flow in the MOCVD reactor cell. Continuous profiles of eac h property, over an area of 40 X 90 mm, have then been calculated by p olynomial fitting and scaling of these discrete points. These profiles were used to compare MOCVD growth of MCT onto substrates placed on an d below the cracking susceptor in the reactor cell.