SHAPE OF THE SOLID-LIQUID INTERFACE AND DOPANT DISTRIBUTION OF BRIDGMAN GROWN GEGA

The influence of process parameters and convections on grown crystals during Bridgman-Stockbarger crystal growth is analysed experimentally. It is shown that the shape of the solid-liquid interface depends main ly on thermal boundary conditions of the growth system. In the thermal ly stabilized Bridgman configuration, convections in the semiconductor melt with low Prandtl number have negligible effect on the shape of t he interface. The axial and in particular the radial dopant concentrat ion profiles allow conclusions on influence and type of bouyant convec tion in the melt to be made.