EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE THIN-FILMS BY SPRAY-PYROLYSIS USING A SINGLE-SOURCE ORGANOMETALLIC PRECURSOR

Epitaxial films of gallium arsenide were grown on (100) GaAs at 520-54 0-degrees-C from the single source organometallic precursor [(n-Bu)2Ga (mu-As(t-Bu)2)]2 using a modified spray pyrolysis process. The epitaxi al nature of the films was established by X-ray diffraction and Ruther ford backscattering analyses. Secondary ion mass spectrometry analysis indicated an accumulation of carbon and oxygen at the film-substrate interface. Resistivity and Hall effect measurements suggest that the f ilms are highly compensated.