ON MASS-SPECTROSCOPIC AND EMISSION-SPECTROSCOPIC CVD PROCESS MONITORING OF ORGANOMETALLICS O-2 DISCHARGES/

Citation
Fw. Breitbarth et al., ON MASS-SPECTROSCOPIC AND EMISSION-SPECTROSCOPIC CVD PROCESS MONITORING OF ORGANOMETALLICS O-2 DISCHARGES/, Plasma chemistry and plasma processing, 13(2), 1993, pp. 289-309
Citations number
14
Categorie Soggetti
Physics, Applied","Engineering, Chemical","Phsycs, Fluid & Plasmas
ISSN journal
02724324
Volume
13
Issue
2
Year of publication
1993
Pages
289 - 309
Database
ISI
SICI code
0272-4324(1993)13:2<289:OMAECP>2.0.ZU;2-#
Abstract
Mass spectroscopic analysis of neutrals and ions from a deposition pla sma shows that the decomposition of the organometallic precursor compo unds [La(thd)3, Cu(acac)2, and Al isopropoxide] in the plasma starts w ith the abstraction of complete ligands. The mass spectra of plasma io ns sensitively indicate the incomplete oxidation of the organic fragme nts with increasing organometallic partial pressure. The concentration of carbon-rich ions in the oxygen-based deposition plasma correlates with the carbon content of the deposited oxide films. Specific emissio ns of the precursor compounds (e.g., Cu atomic lines and LaO bands) ca n be used to monitor the precursor partial pressure; however, there is some interference with sputter emission from the deposited films. Dur ing La2O3 deposition, optical emission of oxidation products (eg., OH, CO, CO2 bands) was used to regulate the precursor partial pressure in the discharge with a closed-loop control circuit.