De. Rees et al., CALCULATION OF BEAM LOADING USING THE INDUCED-CURRENT METHOD IN PASSIVE CAVITIES, I.E.E.E. transactions on electron devices, 40(8), 1993, pp. 1543-1548
Quantitative knowledge of beam loading and detuning is necessary for t
he prediction of the bandwidth and operating frequency of an electron
device that has resonant interactions. We present a method for calcula
ting the loaded Q and beam detuning of a passive (gain or idler) cavit
y in an electron device. The method is based on the determination of i
nduced current by a technique often referred to as Ramo's theorem. We
use the induced current in conjunction with a lumped equivalent circui
t representing the cavity. This leads to a solution for the self-consi
stent cavity fields. Although the induced-current expression is usuall
y developed from low-frequency models, we show that Ramo's theorem is
valid for high-frequency, steady-state analysis when the unloaded pass
ive cavity Q is high. We use the method to calculate the loaded Q of t
he passive cavity of a new type of gyro-resonant electron device, the
magnicon.