DISCHARGE TREATMENT OF W-SI SYSTEM FOR SILICIDATION

Authors
SINGH A VYAS PD KHOKLE WS SINGH C LAL K
Citation
A. Singh et al., DISCHARGE TREATMENT OF W-SI SYSTEM FOR SILICIDATION, I.E.E.E. transactions on electron devices, 40(8), 1993, pp. 1551-1553
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
40
Issue
8
Year of publication
1993
Pages
1551 - 1553
Database
ISI
SICI code
0018-9383(1993)40:8<1551:DTOWSF>2.0.ZU;2-0
Abstract
An extremely reliable tungsten silicide is formed by reacting tungsten film with silicon wafer. The tungsten film is RF magnetron sputter-de posited onto a silicon wafer and is subjected to a novel discharge tre atment. As a result, an amorphous tungsten silicide is induced. Finall y, an effective tungsten silicide with tetragonal end phase and low sh eet resistance forms when the sample is suitably vacuum-annealed at hi gh temperature.