DEEP-LEVEL EFFECTS ON FORWARD CHARACTERISTICS OF RECTIFYING CONTACTS ON SEMICONDUCTING DIAMOND

Authors
VENKATESAN V VONWINDHEIM JA DAS K
Citation
V. Venkatesan et al., DEEP-LEVEL EFFECTS ON FORWARD CHARACTERISTICS OF RECTIFYING CONTACTS ON SEMICONDUCTING DIAMOND, I.E.E.E. transactions on electron devices, 40(8), 1993, pp. 1556-1558
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
40
Issue
8
Year of publication
1993
Pages
1556 - 1558
Database
ISI
SICI code
0018-9383(1993)40:8<1556:DEOFCO>2.0.ZU;2-6
Abstract
Current-voltage characteristics of P-doped polycrystalline Si, Au, and Pt contacts on naturally occurring semiconducting (100) diamond cryst als have been investigated. Logarithmic plots of the forward character istics of these rectifying contacts indicate a space-charge-limited cu rrent conduction that is influenced by the presence of deep-level stat es. A simple analysis of these characteristics has been used to identi fy various deep-level states in the energy range 0.5-0.8 eV above the valence band.