Sr. Bahl et Ja. Delalamo, A NEW DRAIN-CURRENT INJECTION TECHNIQUE FOR THE MEASUREMENT OF OFF-STATE BREAKDOWN VOLTAGE IN FETS, I.E.E.E. transactions on electron devices, 40(8), 1993, pp. 1558-1560
We present a new simple three-terminal technique to measure the off-st
ate breakdown voltage of FET's. With the source grounded, current is i
njected into the drain of the on-state device. The gate is then ramped
down to shut the device off. In this process, the drain-source voltag
e rises to a peak and then drops. This peak represents an unambiguous
definition of three-terminal breakdown voltage. In the same scan, we a
dditionally obtain a measurement of the two-terminal gate-drain breakd
own voltage. The proposed method offers potential for use in a manufac
turing environment, as it is fully automatable. It also enables easy m
easurement of breakdown voltage in unstable and fragile devices.