A SIMPLE 2-DIMENSIONAL MODEL FOR SUBTHRESHOLD CHANNEL-LENGTH MODULATION IN SHORT-CHANNEL MOSFETS

Authors
GREEN KR FOSSUM JG
Citation
Kr. Green et Jg. Fossum, A SIMPLE 2-DIMENSIONAL MODEL FOR SUBTHRESHOLD CHANNEL-LENGTH MODULATION IN SHORT-CHANNEL MOSFETS, I.E.E.E. transactions on electron devices, 40(8), 1993, pp. 1560-1563
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
40
Issue
8
Year of publication
1993
Pages
1560 - 1563
Database
ISI
SICI code
0018-9383(1993)40:8<1560:AS2MFS>2.0.ZU;2-U
Abstract
A physical yet simple model that describes subthreshold channel-length modulation and its complex relationship with DIBL in short-channel MO SFET's is derived. The underlying quasi-two-dimensional analysis produ ces a V(DS)-independent value for the modulated channel length in weak inversion, which can be used to simplify and correct subthreshold cur rent simulation. The model, supported by numerical device simulations, further gives insight regarding how channel-length modulation scales with structural parameters.