RADIATION HARDNESS OF MOSFETS WITH N2O-NITRIDED GATE OXIDES

Radiation hardness of furnace N2O-nitrided gate oxides was investigate d for both n- and p-channel MOSFET's by exposing devices in an X-ray r adiation system. An enhanced degradation was observed in both control and N2O-nitrided MOSFET's with reduction in the channel length. Compar ed to MOSFET's with control oxides, N2O-nitrided MOSFET's show an enha nced radiation hardness against positive charge buildup and interface state generation. We also studied channel hot-carrier effects on the i rradiated devices with subsequent low-temperature forming gas annealin g. Results show that N2O-nitrided oxides have a greatly enhanced resis tance against radiation-inducted neutral electron trap generation.