ON THE IMPROVEMENT OF GATE VOLTAGE SWINGS IN DELTA-DOPED GAAS INXGA1-XAS/GAAS PSEUDOMORPHIC HETEROSTRUCTURES/

Authors
HSU WC SHIEH HM KAO MJ HSU RT WU YH
Citation
Wc. Hsu et al., ON THE IMPROVEMENT OF GATE VOLTAGE SWINGS IN DELTA-DOPED GAAS INXGA1-XAS/GAAS PSEUDOMORPHIC HETEROSTRUCTURES/, I.E.E.E. transactions on electron devices, 40(9), 1993, pp. 1630-1635
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
40
Issue
9
Year of publication
1993
Pages
1630 - 1635
Database
ISI
SICI code
0018-9383(1993)40:9<1630:OTIOGV>2.0.ZU;2-N
Abstract
Significant improvements on gate voltage swings in delta-doped GaAs/In xGa1-xAs/GaAs pseudomorphic heterostructures prepared by low-pressure metalorganic chemical vapor deposition have been demonstrated and disc ussed. Structure utilizing a compositionally graded InxGa1-xAs channel revealed a very flat transconductance region of 2 V. While the gate v oltage swings of single and double delta-doped GaAs/In0.25Ga0.75As/GaA s structures were 2.5 and 2.8 V, respectively. All structures in this work also exhibited high extrinsic transconductances as well as high s aturation current densities.