INTEGRAL RELATIONS FOR DETERMINING NON-QUASI-STATIC CHARGE PARTITIONING IN BIPOLAR-DEVICES FROM STATIC CHARGE-DISTRIBUTIONS

Integral relations are rigorously derived for the non-quasistatic char ge partitioning in bipolar devices in terms of static carrier distribu tions in low-level injection. The resulting expressions are simpler th an previous charge partitioning expressions for arbitrary impurity pro files, and in contrast to previous expressions, take into account mino rity-carrier recombination which is required in the emitter region of bipolar transistors. The simplicity of the derived integral relations enables the development of a semi-analytic expression for the charge p artitioning in the base region which does not require a static minorit y carrier solution, and which is similar in computational complexity t o the base transit time.