MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF ZNSE ON GAAS

Systematic investigations have been performed concerning the effect of growth temperature and beam pressure ratio on the structural perfecti on and optical properties of molecular beam epitaxy (MBE) grown ZnSe o n GaAs substrates. A surface phase diagram of ZnSe has been derived sh owing the different surface reconstructions as a function of these gro wth conditions. RHEED reflex profiling reveals more details about the surface morphology occurring in different stages of the growth process . The epitaxial layers are further characterized by means of X-ray dif fraction and various optical techniques.