GROWTH OF MGTE AND CD1-XMGXTE THIN-FILMS BY MOLECULAR-BEAM EPITAXY

We report on the growth of the compound semiconductor MgTe as well as the ternary alloy Cd1-xMgxTe by molecular beam epitaxy. This is to our knowledge the first time that this material has been grown by any epi taxial technique. Bulk MgTe, which is hygroscopic, has a band gap of 3 .0 eV and crystallizes usually in the wurtzite structure. Pseudomorphi c films were grown on zincblende CdTe substrates for a MgTe thickness below a critical layer thickness of approximately 500 nm. In addition. Cd1-xMgxTe epilayers were grown with a Mg concentration between 0 and 68%, which corresponds to a band gap between 1.5 and 2.5 eV at room t emperature. The crystalline quality of the layers is comparable to CdT e thin films as long as they are fully strained. The lattice constant of zincblende MgTe is slightly smaller than that of CdTe, and the latt ice mismatch is as low as 0.7% In addition highly n-type CdMgTe layers were fabricated by bromine doping. The tunability of the band gap as well as the rather good lattice match with CdTe makes the material int eresting for optoelectronic device applications for the entire visible range.