CLEANING TECHNOLOGY FOR IMPROVED GATE OXIDE INTEGRITY

Authors
MEURIS M VERHAVERBEKE S MERTENS PW SCHMIDT HF HEYNS MM KUBOTA M PHILIPOSSIAN A DILLENBECK K GRAF D SCHNEGG A DEBLANK R
Citation
M. Meuris et al., CLEANING TECHNOLOGY FOR IMPROVED GATE OXIDE INTEGRITY, Microelectronic engineering, 22(1-4), 1993, pp. 21-28
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
22
Issue
1-4
Year of publication
1993
Pages
21 - 28
Database
ISI
SICI code
0167-9317(1993)22:1-4<21:CTFIGO>2.0.ZU;2-3
Abstract
The effect of metal contamination and silicon surface defects on the g ate oxide yield is investigated. The characteristics of various cleani ng procedures are studied and correlated with the integrity of thin ga te oxides. The standard wet cleaning recipe is optimized and a new cle aning strategy is proposed. Selective contamination experiments in che micals are used to investigate the effect of small amounts of metal co ntaminants on the gate oxide integrity. HF-last processes are investig ated and a new wet cleaning strategy is proposed.