FERROELECTRICS AND HIGH PERMITTIVITY DIELECTRICS FOR MEMORY APPLICATIONS

Authors
LARSEN PK SPIERINGS GACM CUPPENS R DORMANS GJM
Citation
Pk. Larsen et al., FERROELECTRICS AND HIGH PERMITTIVITY DIELECTRICS FOR MEMORY APPLICATIONS, Microelectronic engineering, 22(1-4), 1993, pp. 53-60
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
22
Issue
1-4
Year of publication
1993
Pages
53 - 60
Database
ISI
SICI code
0167-9317(1993)22:1-4<53:FAHPDF>2.0.ZU;2-G
Abstract
In this paper an overview will be given of the field of non-volatile f erroelectric memories with the emphasis on material and processing asp ects for high density applications. The emerging field of high permitt ivity dielectric materials for dynamic random access memories, applyin g materials closely related to those for ferroelectric memories, will be treated as well.