TUNNEL OXIDES GROWN BY RAPID THERMAL-OXIDATION

Authors
DEPAS M VANMEIRHAEGHE RL LAFLERE WH CARDON F
Citation
M. Depas et al., TUNNEL OXIDES GROWN BY RAPID THERMAL-OXIDATION, Microelectronic engineering, 22(1-4), 1993, pp. 61-64
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
22
Issue
1-4
Year of publication
1993
Pages
61 - 64
Database
ISI
SICI code
0167-9317(1993)22:1-4<61:TOGBRT>2.0.ZU;2-K
Abstract
Oxide layers with a thickness from 2 to 5nm were grown on (100) Si uti lizing rapid thermal oxidation. RTO is shown to be a reliable method t o obtain good quality SiO2 tunnel barriers. An analytical model is use d to discuss the charge transport in Al/SiO2/n-Si tunnel diodes quanti tatively. The influence of an in situ hydrogen anneal on the SiO2/Si i nterface is examined.