A NEW METHOD TO FABRICATE THIN OXYNITRIDE OXIDE GATE DIELECTRIC FOR DEEP-SUBMICRON DEVICES

Authors
MANCHANDA L WEBER GR KIM YO FELDMAN LC MORYIA N WEIR BE KISTLER RC GREEN ML BRASEN D
Citation
L. Manchanda et al., A NEW METHOD TO FABRICATE THIN OXYNITRIDE OXIDE GATE DIELECTRIC FOR DEEP-SUBMICRON DEVICES, Microelectronic engineering, 22(1-4), 1993, pp. 69-72
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
22
Issue
1-4
Year of publication
1993
Pages
69 - 72
Database
ISI
SICI code
0167-9317(1993)22:1-4<69:ANMTFT>2.0.ZU;2-N
Abstract
In this paper, we report a new method to fabricate oxynitride/oxide ga te dielectrics for MOS devices. This method utilizes a thin layer of o xynitride as a membrane for controlled diffusion of O2 and oxidation o f Si at high temperatures with low thermal budget. MOS devices made wi th these oxynitride/oxide structures have interface properties like th ermal SiO2 with a structure resistant to boron diffusion.