ELECTRICAL CHARACTERIZATION VERSUS TEMPERATURE OF SI MOS-TRANSISTORS WITH PLASMA-NITRIDED GATE OXIDE

Authors
EMRANI A GHIBAUDO G BALESTRA F PIOT B THIRION V STRABONI A
Citation
A. Emrani et al., ELECTRICAL CHARACTERIZATION VERSUS TEMPERATURE OF SI MOS-TRANSISTORS WITH PLASMA-NITRIDED GATE OXIDE, Microelectronic engineering, 22(1-4), 1993, pp. 89-92
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
22
Issue
1-4
Year of publication
1993
Pages
89 - 92
Database
ISI
SICI code
0167-9317(1993)22:1-4<89:ECVTOS>2.0.ZU;2-V
Abstract
A detailed investigation of the electrical properties of MOS transisto rs with gate oxides nitrided for long (3 h) and short (40 min) times h as been carried out as a function of temperature (4.2-300 K). The infl uence of the nitridation process on the oxide charge, interface state density and transport coefficients is studied and discussed in physica l terms.