SIMULTANEOUS ELIMINATION OF ELECTRICALLY ACTIVE DEFECTS IN SI SIO2 STRUCTURES BY IMPLANTED FLUORINE/

Authors
AFANASEV VV DEPAS M DENIJS JMM BALK P
Citation
Vv. Afanasev et al., SIMULTANEOUS ELIMINATION OF ELECTRICALLY ACTIVE DEFECTS IN SI SIO2 STRUCTURES BY IMPLANTED FLUORINE/, Microelectronic engineering, 22(1-4), 1993, pp. 93-96
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
22
Issue
1-4
Year of publication
1993
Pages
93 - 96
Database
ISI
SICI code
0167-9317(1993)22:1-4<93:SEOEAD>2.0.ZU;2-E
Abstract
The effect of fluorine implantation on oxide and interface trapping ce ntres in Si/SiO2 structures has been investigated using charge injecti on techniques. Significant reduction of the density of various defects has been observed for ultra-dry and wet oxides after F-implantation. The elimination of the traps takes place in a correlated manner despit e the different nature of the centres. The catalytic action of fluorin e via strain relaxation or release of defect passivating species is pr oposed to be the cause of the observed effect.