INTERFACE PROPERTIES IN FLUORINATED (100) AND (111)SI SIO2 MOSFETS/

Authors
BALASINSKI A TSAI MH VISHNUBHOTLA L MA TP TSENG HH TOBIN PJ
Citation
A. Balasinski et al., INTERFACE PROPERTIES IN FLUORINATED (100) AND (111)SI SIO2 MOSFETS/, Microelectronic engineering, 22(1-4), 1993, pp. 97-100
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
22
Issue
1-4
Year of publication
1993
Pages
97 - 100
Database
ISI
SICI code
0167-9317(1993)22:1-4<97:IPIF(A>2.0.ZU;2-A
Abstract
The incorporation of fluorine in the gate oxide is shown to reduce int erface defect density in (100) and (111) Si MOSFETs, leading to increa sed carrier mobility and reduced 1/f noise. The resulting low densitie s of interface traps and oxide charge have made it possible to study m ore clearly the effect of the orientation-dependent electron and hole effective masses on carrier mobility.