ALKYL-TRICHLOROSILANE MONOLAYER AS ULTRA-THIN INSULATING FILM FOR SILICON MIS DEVICES

in order to fabricate metal-insulator-semiconductor (MIS) devices with gate insulating films thinner than 5 nm, organic monolayers have been grafted on the native oxide layer of silicon wafer. We demonstrate fo r the first time that a single monolayer of alkyl-trichlorosilane with a thickness in the range 1.9-2.8 rim allows to fabricate a silicon ba sed MIS device with gate leakage current density as low as 10(-8) A/cm 2 at 5.8 MV/cm, high dielectric breakdown field (12 MV/cm), insulator charge density lower than 10(10) cm-2, and a fast interface state dens ity at mid-gap of the order of 10(11) cm-2eV-1. Moreover, this insulat ing film is thermally stable up to 450-degrees-C.