AN IMPROVED THEORY OF SPIN-DEPENDENT RECOMBINATION - APPLICATION TO THE PB CENTER AT THE SI-SIO2 INTERFACE

Authors
LANNOO M VUILLAUME D DERESMES D STIEVENARD D
Citation
M. Lannoo et al., AN IMPROVED THEORY OF SPIN-DEPENDENT RECOMBINATION - APPLICATION TO THE PB CENTER AT THE SI-SIO2 INTERFACE, Microelectronic engineering, 22(1-4), 1993, pp. 143-146
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
22
Issue
1-4
Year of publication
1993
Pages
143 - 146
Database
ISI
SICI code
0167-9317(1993)22:1-4<143:AITOSR>2.0.ZU;2-J
Abstract
We propose an improved theory of the spin dependent recombination at d efects in p-n junctions. This theory accounts for the experimental obs ervations on the P(b) center at the Si-SiO2 interface.